IBM (NYSE: IBM) and Micron Technology
Inc. announced today that Micron will begin production of a new memory
device built using the first commercial CMOS manufacturing technology to
employ through-silicon vias (TSVs). IBM's advanced TSV chip-making
process enables Micron's Hybrid Memory Cube (HMC) to achieve speeds 15
times faster than today's technology.
Micron's Hybrid Memory Cube features a stack of individual chips
connected by vertical pipelines or “vias,” shown above. IBM’s new 3-D
manufacturing technology, used to connect the 3D micro structure, will
be the foundation for commercial production of the new memory cube.
IBM will present the details of its TSV manufacturing breakthrough at
the IEEE International Electron Devices Meeting on December 5 in
Washington, DC.
HMC parts will be manufactured at IBM's advanced semiconductor fab in
East Fishkill, N.Y., using the company's 32nm, high-K metal gate process
technology.
HMC technology uses advanced TSVs — vertical conduits that electrically
connect a stack of individual chips — to combine high-performance logic
with Micron's state-of-the-art DRAM. HMC delivers bandwidth and
efficiencies a leap beyond current device capabilities. HMC prototypes,
for example, clock in with bandwidth of 128 gigabytes per second
(GB/s). By comparison, current state-of-the-art devices deliver 12.8
GB/s. HMC also requires 70 percent less energy to transfer data while
offering a small form factor — just 10 percent of the footprint of
conventional memory.
HMC will enable a new generation of performance in applications ranging
from large-scale networking and high-performance computing, to
industrial automation and, eventually, consumer products.
"This is a milestone in the industry move to 3D semiconductor manufacturing," said Subu Iyer, IBM Fellow. "The manufacturing process
we are rolling out will have applications beyond memory, enabling other
industry segments as well. In the next few years, 3D chip technology
will make its way into consumer products, and we can expect to see
drastic improvements in battery life and functionality of devices."
"HMC is a game changer, finally giving architects a flexible memory
solution that scales bandwidth while addressing power efficiency," said
Robert Feurle, Vice President of DRAM Marketing for Micron. "Through
collaboration with IBM, Micron will provide the industry's most capable
memory offering."
Additional information, technical specifications, tools and support for adopting HMC technology can be found at micron.com.
Source IBM to Produce Micron's HMC in Debut of First Commercial, 3D Chip-Making Capability
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