IBM (NYSE: IBM) and Micron Technology
 Inc. announced today that Micron will begin production of a new memory 
device built using the first commercial CMOS manufacturing technology to
 employ through-silicon vias (TSVs). IBM's advanced TSV chip-making 
process enables Micron's Hybrid Memory Cube (HMC) to achieve speeds 15 
times faster than today's technology.
Micron's Hybrid Memory Cube features a stack of individual chips 
connected by vertical pipelines or “vias,” shown above. IBM’s new 3-D 
manufacturing technology, used to connect the 3D micro structure, will 
be the foundation for commercial production of the new memory cube.
IBM will present the details of its TSV manufacturing breakthrough at 
the IEEE International Electron Devices Meeting on December 5 in 
Washington, DC.
HMC parts will be manufactured at IBM's advanced semiconductor fab in 
East Fishkill, N.Y., using the company's 32nm, high-K metal gate process
 technology.
HMC technology uses advanced TSVs — vertical conduits that electrically 
connect a stack of individual chips — to combine high-performance logic 
with Micron's state-of-the-art DRAM.  HMC delivers bandwidth and 
efficiencies a leap beyond current device capabilities.  HMC prototypes,
 for example, clock in with bandwidth of 128 gigabytes per second 
(GB/s). By comparison, current state-of-the-art devices deliver 12.8 
GB/s. HMC also requires 70 percent less energy to transfer data while 
offering a small form factor — just 10 percent of the footprint of 
conventional memory.
HMC will enable a new generation of performance in applications ranging 
from large-scale networking and high-performance computing, to 
industrial automation and, eventually, consumer products.
 "This is a milestone in the industry move to 3D semiconductor manufacturing," said Subu Iyer, IBM Fellow. "The manufacturing process
 we are rolling out will have applications beyond memory, enabling other
 industry segments as well. In the next few years, 3D chip technology 
will make its way into consumer products, and we can expect to see 
drastic improvements in battery life and functionality of devices."
"HMC is a game changer, finally giving architects a flexible memory 
solution that scales bandwidth while addressing power efficiency," said 
Robert Feurle, Vice President of DRAM Marketing for Micron. "Through 
collaboration with IBM, Micron will provide the industry's most capable 
memory offering."
Additional information, technical specifications, tools and support for adopting HMC technology can be found at micron.com.
Source IBM to Produce Micron's HMC in Debut of First Commercial, 3D Chip-Making Capability
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